Search results for "Indium phosphide"

Service-Oriented Wireless Virtualized Networks: An Intelligent Resource Management Approach

2022

Virtual Resource Allocation for Wireless Virtualized Heterogeneous Network with Hybrid Energy Supply

2022

In this work, two novel virtual user association and resource allocation algorithms are introduced for a wireless virtualized heterogeneous network with hybrid energy supply. In the considered system, macro base stations (MBSs) are supplied by the grid power and small base stations (SBSs) have the energy harvesting capability in addition to the grid power supplement. Multiple infrastructure providers (InPs) own the physical resources, i.e., BSs and radio resources. The Mobile Virtual Network Operators (MVNOs) are able to recent these resources from the InPs and operate the virtualized resources for providing services to different users. In particular, aiming to maximize the overall utility …

Initial stages of self-assembled InAs/InP(001) quantum wire formation

2007

4 páginas, 2 figuras.-- PACS codes: 78.67.Lt; 68.65.La; 68.37.Ps.-- Comunicación oral presentada a la 14ª International Conference on Molecular Beam Epitaxy - MBE XIV celebrada en Tokio (Japón) del 3 al 8 de Septiembre de 2006.

Elucidating the electron transport in semiconductors via Monte Carlo simulations: An inquiry-driven learning path for engineering undergraduates

2015

Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model…

Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells

2021

This paper discusses and demonstrates the usefulness and prospects of using textured layers of indium phosphide as a material for space solar cells. Such designs improve the performance of the photovoltaic converter by increasing the effective area and surface roughness. Thus, it minimizes the background reflectivity of the surface. Textured layers on the InP surface were obtained by electrochemical etching using a bromous acid solution.

Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group

2021

In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

2011

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.

Positron lifetime measurements on neutron‐irradiated InP crystals

1996

Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es